Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

631
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
631
Diode: Forward bias01:20

Diode: Forward bias

1.1K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
1.1K
Diode: Reverse bias01:14

Diode: Reverse bias

844
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
844
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

289
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
289
Schottky Barrier Diode01:27

Schottky Barrier Diode

408
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
408
P-N junction01:11

P-N junction

590
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
590

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Stabilizing the Hexacyanotrimethylenecyclopropane Electron Acceptor-Structural and Photophysical Characterization.

Angewandte Chemie (International ed. in English)·2026
Same author

Defects and defect-mediated engineering of two-dimensional materials: challenges and open questions.

Beilstein journal of nanotechnology·2026
Same author

Influence of atomic-scale defects on coherent phonon excitations by THz near fields in an STM.

Science advances·2025
Same author

Direct signatures of d-level hybridization and dimerization in magnetic adatom chains on a superconductor.

Nanoscale·2025
Same author

Self-Similar Phase Diagram of the Fibonacci-Driven Quantum Ising Model.

Physical review letters·2025
Same author

Twist-programmable superconductivity in spin-orbit-coupled bilayer graphene.

Nature·2025

Related Experiment Video

Updated: Jul 30, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K

Diode Effects in Current-Biased Josephson Junctions.

Jacob F Steiner1, Larissa Melischek1, Martina Trahms2

  • 1Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universität Berlin, 14195 Berlin, Germany.

Physical Review Letters
|May 12, 2023
PubMed
Summary
This summary is machine-generated.

We developed a theory for diodelike effects in Josephson junctions. Asymmetric current-phase relations cause switching current nonreciprocity, while quasiparticle currents cause retrapping current nonreciprocity.

More Related Videos

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.7K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.7K

Related Experiment Videos

Last Updated: Jul 30, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.7K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.7K

Area of Science:

  • Condensed Matter Physics
  • Quantum Electronics
  • Superconductivity

Background:

  • Current-biased Josephson junctions show hysteretic behavior between superconducting and dissipative states.
  • Switching and retrapping currents characterize these transitions.

Purpose of the Study:

  • To develop a theoretical framework for understanding diodelike effects in Josephson junctions.
  • To elucidate the microscopic origins of nonreciprocity in switching and retrapping currents.

Main Methods:

  • Theoretical development of diodelike effects in weakly damped Josephson junctions.
  • Analysis of asymmetric current-phase relations and quasiparticle currents.
  • Illustration using a microscopic model of a single magnetic atom junction.

Main Results:

  • Diodelike behavior in switching currents arises from asymmetric current-phase relations.
  • Nonreciprocal retrapping currents originate from asymmetric quasiparticle currents.
  • Distinct symmetry requirements are identified for each nonreciprocity.

Conclusions:

  • The theory provides a clear distinction between the origins of nonreciprocity in switching and retrapping currents.
  • It offers guidance for identifying microscopic sources of nonreciprocity in Josephson junctions.
  • Understanding these effects is crucial for designing advanced superconducting devices.