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Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps

Chanyang Park1, Jun-Sik Yoon1, Kihoon Nam1

  • 1Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|May 13, 2023
PubMed

Keywords:
3D NAND flashMonte−Carlo simulationabnormal program cellcharge trap nitrideincremental step pulse programmingovershootover−programmingprogram efficiency

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