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Updated: Jul 30, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Coexistent VO2 (M) and VO2 (B) Polymorphous Thin Films with Multiphase-Driven Insulator-Metal Transition
Mengxia Qiu1,2, Wanli Yang3, Peiran Xu1
1State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Polymorphous vanadium dioxide (VO2) thin films with coexisting VO2 (M) and VO2 (B) phases exhibit phase-dependent insulator-metal transitions. The presence of VO2 (B) promotes the transition temperature in VO2 (M) films.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Vanadium dioxide (VO2) exhibits a reversible insulator-metal transition (IMT) crucial for electronic devices.
- Understanding the coexistence and IMT behavior of VO2 polymorphs is challenging but vital.
- Different phases, like VO2 (M) and VO2 (B), possess distinct electrical properties and lattice structures.
Purpose of the Study:
- To investigate polymorphous VO2 thin films with coexisting VO2 (M) and VO2 (B) phases.
- To analyze the phase-dependent IMT behaviors in these mixed-phase VO2 films.
- To understand how the presence of VO2 (B) influences the IMT and microstructure of VO2 (M).
Main Methods:
- Fabrication of polymorphous VO2 thin films containing both VO2 (M) and VO2 (B) phases.
- Characterization of structural and phase-dependent properties using advanced analytical techniques.
- Analysis of lattice distortions and vibrational shifts induced by phase coexistence.
Main Results:
- Successfully created VO2 thin films with coexisting VO2 (M) and VO2 (B) phases.
- Observed lattice distortions in VO2 (M) due to the presence of VO2 (B), including widened (011)M plane spacing.
- Demonstrated that coexisting VO2 (B) phases promote the IMT temperature of the polymorphous VO2 thin films.
Conclusions:
- The coexistence of VO2 (M) and VO2 (B) phases significantly impacts VO2 thin film properties.
- Phase coexistence influences lattice dynamics and promotes the insulator-metal transition temperature.
- These findings offer insights into microstructure-property relationships for advanced electronic and optoelectronic devices.
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