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Published on: March 19, 2017
Lead-Free FACsSnI3 Based Perovskite Solar Cell: Designing Hole and Electron Transport Layer
Syed Abdul Moiz1, Ahmed N M Alahmadi1, Mohammed Saleh Alshaikh1
1Device Simulation Laboratory, Department of Electrical Engineering, College of Engineering and Islamic Architecture, Umm Al-Qura University, Makkah 21955, Saudi Arabia.
Abstract:
In recent years, lead-based perovskites solar cells have demonstrated excellent power-conversion efficiency. Despite their remarkable progress, the commercialization of lead-based perovskites is hampered by lead toxicity concerns. The recently discovered non-toxic FACsSnI3 perovskite has the potential to replace lead-based perovskites in solar cell applications. Since the perovskite material FACsSnI3 (FA0.85Cs0.15SnI3) is relatively new, there is a lack of information, particularly regarding the design features required for electron and hole-transport layers for efficient photovoltaic responses. The important variables, such as electron affinity, energy band gap, film thickness, and doping density of both electron and hole-transport layers, were simulated and modeled separately and iteratively in this study to achieve the most efficient photovoltaic response. Finally, the absorber layer thickness of FACsSnI3 perovskite is tuned to achieve a maximum power-conversion efficiency of slightly more than 24%. We hope that the findings of this study will serve as a strong guideline for future research and the design of lead-free perovskite solar cells for efficient photovoltaic responses.

