Related Experiment Video
Updated: Jul 30, 2025

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Effect of Zn Doping on Structural/Microstructural, Surface Topography, and Dielectric Properties of Bi2Fe4O9
Ram Raseele Awasthi1, Sanjeev Kumar Trivedi1, Vishal Singh Chandel2
1Faculty of Engineering and Technology, Khwaja Muniddin Chisti Language University, Lucknow, Uttar Pradesh 226013, India.
Abstract:
In the present research work, bismuth ferrite mullite type Bi2Fe4-ZnO9 (0.0 ≤ x ≤ 0.05) nanostructures are prepared by a chemical coprecipitation method and the effect of Zn doping concentration on the structural, surface topography, and dielectric properties is reported. The powder X-ray diffraction pattern of the Bi2Fe4-ZnO9 (0.0 ≤ x ≤ 0.05) nanomaterial shows an orthorhombic crystal structure. Using Scherer's formula, the crystallite sizes of the nanomaterial Bi2Fe4-ZnO9 (0.0 ≤ x ≤ 0.05) have been calculated and found to be 23.54 and 45.65 nm, respectively. The results of the atomic force microscopy (AFM) investigations show that spherical shape nanoparticles have grown and are densely packed around each other. AFM/scanning electron microscopy images, however, also illustrate that spherical nanoparticles transform into nanorod-like nanostructures with an increase in Zn concentrations. The transmission electron micrography images of Bi2Fe4-ZnO9 (x = 0.05) showed elongated/spherical shape grains homogeneously distributed throughout the inside of the surface of the sample. The dielectric constants of Bi2Fe4-ZnO9 (0.0 ≤ x ≤ 0.05) materials have been calculated and found to be 32.95 and 55.32. It is found that the dielectric properties improve with an increase in the Zn doping concentration, making it a good potential contender for multifunctional modern technological applications.
More Related Videos
08:55Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
Published on: June 7, 2018
14:16Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018