Stable and reliable IGZO resistive switching device with HfAlOinterfacial layer

The performance stability of the resistive switching (RS) is vital for a resistive random-access memory device. Here, by inserting a thin HfAlOlayer between the InGaZnO (IGZO) layer and the bottom Pt electrode, the RS performance in amorphous IGZO memory device is significantly improved. Comparing with a typical metal-insulator-metal structure, the device with HfAlOlayer exhibits lower switching voltages, faster switching speeds, lower switching energy and lower power consumption. As well, the uniformity of switching voltage and resistance state is also improved. Furthermore, the device with HfAlOlayer exhibits long retention time (>10⁴s at 85 °C) , high on/off ratio and more than 10³cycles of endurance at atmospheric environment. Those substantial improvements in IGZO memory device are attributed to the interface effects with a HfAlOinsertion layer. With such layer, the formation and rupture locations of Ag conductive filaments are better regulated and confined, thus an improved performance stability.