Related Experiment Video
Updated: Jul 30, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism
Jill Serron1, Albert Minj1, Valentina Spampinato1
1IMEC, Kapeldreef 75, Leuven 3001, Belgium.
Abstract:
The complexity of the water adsorption-desorption mechanism at the interface of transition metal dichalcogenides (TMDs) and its impact on their current transport are not yet fully understood. Here, our work investigates the swift intercalation of atmospheric adsorbates at the TMD and sapphire interface and between two TMD monolayers and probes its influence on their electrical properties. The adsorbates consist mainly of hydroxyl-based (OH) species in the subsurface region suggesting persistent water intercalation even under vacuum conditions, as determined by time-of-flight-secondary ion mass spectrometry (ToF-SIMS) and scanning tunneling microscopy (STM). Water intercalates there rapidly, within the order of a few minutes after being exposed to ambient atmosphere, this process tends to be partly reversible under (ultra)high vacuum, as observed by time-dependent scanning probe microscopy (SPM) based conductivity and ToF-SIMS measurements. A significant enhancement of the electronic properties is observed with the complete desorption of intercalated water clusters because of the pressure-induced melting effect under the tip of the SPM probe. Conversely, it also indicates that the characterization of TMD samples is substantially affected in air, in inert environments, and to some extent even in a vacuum if water intercalation is present. More importantly, STM analysis has uncovered a correlation between water intercalation and the presence of defects, showcasing their role in the gradual degradation of the material as it ages.
More Related Videos
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
10:36Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Related Concept Videos
Crystal Field Theory - Octahedral Complexes
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...