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Band splitting and enhanced charge density wave modulation in Mn-implanted CsV3Sb5
Xiaoxu Lei1,2, Pengdong Wang2, Mengjuan Mi3
1School of Nano-Tech and Nano-Bionics, University of Science and Technology of China Hefei 230026 China.
Manganese doping in Kagome metal CsV3Sb5 enhances charge density waves (CDW) and topological states. Ion implantation creates Mn-doped crystals, revealing band splitting and a higher CDW transition temperature.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Materials
Background:
- Kagome metal CsV3Sb5 exhibits intriguing charge density wave (CDW), topological surface states, and superconductivity.
- The interaction between magnetic doping and the exotic quantum states in CsV3Sb5 remains underexplored.
Purpose of the Study:
- To investigate the effects of magnetic doping on the electronic properties and CDW behavior of CsV3Sb5.
- To explore a novel method for achieving deep doping in bulk materials.
Main Methods:
- Single crystal growth of Mn-doped CsV3Sb5 via ion implantation.
- Angle-resolved photoemission spectroscopy (ARPES) to probe electronic band structure and CDW modulation.
- Analysis of spectral weight transfer and magnetic ordering.
Main Results:
- Ion implantation successfully introduced Mn doping into CsV3Sb5 single crystals.
- Observed anisotropic band splitting across the entire Brillouin region.
- Enhanced CDW modulation indicated by a higher Dirac cone gap closing temperature (135 K ± 5 K) compared to the bulk value (~94 K).
- Evidence of spectral weight transfer to the Fermi level and weak antiferromagnetic order at low temperatures.
Conclusions:
- Manganese doping significantly enhances the charge density wave (CDW) in CsV3Sb5.
- The enhanced CDW is attributed to polariton excitation and Kondo shielding effects.
- Ion implantation provides an effective route for deep doping in bulk materials, creating a platform for studying quantum state couplings.
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