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Non-ohmic Devices

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
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Related Experiment Video

Updated: Jul 29, 2025

Production of a Strain-Measuring Device with an Improved 3D Printer

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Published on: January 30, 2020

A Graphene-Based Straintronic Physically Unclonable Function.

Subir Ghosh¹, Yikai Zheng¹, Shiva Subbulakshmi Radhakrishnan¹

¹Department of Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, USA.

|May 22, 2023

Summary

This summary is machine-generated.

Researchers developed a novel straintronic PUF (SPUF) using graphene transistors that exploit strain-induced cracking for hardware security. This new SPUF offers high ON/OFF ratios and resists machine learning attacks.

Keywords:

Graphene PUF PZT Straintronics

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Area of Science:

Materials Science
Electrical Engineering
Computer Science

Background:

Physically unclonable functions (PUFs) are crucial for hardware security, with existing types including optical, electronic, and magnetic PUFs.
Graphene field-effect transistors (GFETs) offer unique electronic properties for novel device applications.

Purpose of the Study:

To introduce a novel straintronic PUF (SPUF) based on strain-induced reversible cracking in GFETs.
To evaluate the performance and security of SPUFs against various attacks.

Main Methods:

Fabrication of GFETs with piezoelectric gate stacks and high-tensile-strength metal contacts.
Application of strain cycling to GFETs to induce reversible cracking and analyze transfer characteristics.
Testing SPUF resilience against supply voltage variations, temporal stability, and regression-based machine learning (ML) attacks.

Main Results:

Strain cycling induced abrupt transitions in some GFETs, creating strain-sensitive devices with colossal ON/OFF current ratios (>10^7).
Strain-resilient GFETs exhibited lower ON/OFF ratios (<10).
Fabricated SPUFs (25 devices, each with 16 GFETs) demonstrated near-ideal performance and resilience to ML attacks, supply voltage fluctuations, and temporal instability.

Conclusions:

The novel SPUF, leveraging strain-induced cracking in GFETs, presents a promising hardware security solution.
Emerging straintronic devices offer opportunities to address critical needs in the microelectronics industry, particularly in secure hardware.
SPUF's robustness against various attacks highlights its potential for advanced security applications.