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Self-Powered Bi2Se3/Si Position-Sensitive Detector and Its Performance Enhancement by Introducing a Si Nanopyramid
Zidong Liang1, Qing Wang1, Jikui Ma1
1Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China.
ACS Applied Materials & Interfaces
|May 23, 2023
Summary
Bismuth selenide (Bi2Se3) films were used to create self-powered light position-sensitive detectors (PSDs). Optimizing Bi2Se3 thickness and using nanopyramid silicon substrates significantly enhanced detector performance and sensitivity.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Optoelectronics
Background:
- 3D topological insulators (TIs) like Bismuth Selenide (Bi2Se3) exhibit unique electronic and optical properties.
- These properties make Bi2Se3 a promising material for advanced optoelectronic applications, including position-sensitive detectors (PSDs).
Purpose of the Study:
- To develop self-powered light position-sensitive detectors (PSDs) using Bi2Se3 films on silicon substrates.
- To investigate the effect of Bi2Se3 film thickness on PSD performance via the lateral photovoltaic effect (LPE).
- To enhance PSD performance by fabricating Bi2Se3/pyramid-Si heterojunctions.
Main Methods:
- Preparation of Bi2Se3 films with varying thicknesses (5-40 nm) on planar and nanopyramid silicon substrates.
- Fabrication of heterojunctions to create self-powered PSDs utilizing the lateral photovoltaic effect (LPE).
- Characterization of PSD performance, including broad-band response, position sensitivity, nonlinearity, and response time.
Main Results:
- Bi2Se3/planar-Si heterojunctions exhibited a broad spectral response (450-1064 nm).
- PSD performance was strongly dependent on Bi2Se3 thickness, with a 15 nm film showing optimal sensitivity (89.7 mV/mm) and fast response (62.6/49.4 μs).
- Bi2Se3/pyramid-Si heterojunctions significantly boosted position sensitivity to 178.9 mV/mm (199% increase) with maintained nonlinearity (<10%) and ultrafast response times (173/97.4 μs).
Conclusions:
- Bi2Se3 is a highly effective material for developing high-performance, self-powered PSDs.
- Nanostructuring the silicon substrate (pyramid structure) offers a viable strategy to substantially enhance light absorption and PSD sensitivity.
- The study highlights the potential of topological insulators in PSD technology and provides a method for performance optimization.
