Actively manipulating the photonic spin Hall effect by bias-assisted light-induced carrier injection

In this work, we present a simple and active mechanism for manipulating the photonic spin Hall effect (SHE) of an InP-based layered structure by taking advantage of the alterable refractive index of InP via bias-assisted carrier injection. The photonic SHE of transmitted light for both H- and V-polarized beams is quite sensitive to the intensity of the bias-assisted light. The spin shift can reach its giant value under the optimal intensity of bias light, which corresponds to the proper refractive index of InP induced by the photon-induced carrier injection. Except for the modulation of the bias light intensity, there is another method to manipulate the photonic SHE by adjusting the wavelength of bias light. We found that this method of tuning the bias light wavelength is more effective for H-polarized light than for the V-polarized light.