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p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors

Ryoichi Kato1, Haruki Uchiyama1,2, Tomonori Nishimura1

  • 1Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.

ACS Applied Materials & Interfaces
|May 24, 2023
PubMed

Keywords:
Schottky barrierWSe2field-effect transistoroxidationp-type

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