Tomonori Nishimura
6PUBLICATIONS
18CO-AUTHORS
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Publications (6)
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|Jan 21, 2026
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics.Yoshiki Sakuma, Keisuke Atsumi, Takanobu Hiroto
|Oct 21, 2025
Quantitative ToF-SIMS Assessment of In-Plane and Out-of-Plane Nb Doping Uniformity in CVT-Grown MoS2 Crystals.Itsuki Tanaka, Mian Wei, Tomonori Nishimura
|Sep 29, 2025
Structural and Electric Characterization of Sputtered Pt/WSe2 Contacts toward High-Performance 2D p‑FETs.Ryuichi Nakajima, Tomonori Nishimura, Kaito Kanahashi
|Mar 03, 2025
Dimensionality-Induced Transition from Degenerate to Nondegenerate States in Nb-Doped WSe2.Kaito Kanahashi, Itsuki Tanaka, Tomonori Nishimura
|Feb 07, 2024
Single-Gate MoS2 Tunnel FET with a Thickness-Modulated Homojunction.Tomohiro Fukui, Tomonori Nishimura, Yasumitsu Miyata
|May 24, 2023
p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors.Ryoichi Kato, Haruki Uchiyama, Tomonori Nishimura
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Frequent Collaborators
6 joint publications
Kosuke Nagashio
3 joint publications
Takashi Taniguchi
3 joint publications
Kenji Watanabe
3 joint publications
Kaito Kanahashi
1 joint publications
Kohei Aso
1 joint publications
Anh Khoa Augustin Lu
1 joint publications
Satoshi Watanabe
1 joint publications
Yoshifumi Oshima
1 joint publications
Shogo Hatayama
1 joint publications
Wen Hsin Chang
