A nonvolatile bidirectional reconfigurable FET based on S/D self programmable floating gates.

Area of Science:

• Semiconductor Device Physics
• Nanotechnology
• Materials Science

Background:

• Conventional reconfigurable field-effect transistors (RFETs) require multiple independently powered gates, increasing complexity and power consumption.
• Existing designs face challenges with leakage currents, particularly band-to-band tunneling (BTBT), limiting performance at nanoscale dimensions.

Purpose of the Study:

• To propose and analyze a novel nanoscale nonvolatile bidirectional reconfigurable field-effect transistor (NBRFET).
• To demonstrate a simplified device structure with enhanced reconfigurability and reduced leakage current.

Main Methods:

• Development of a nanoscale NBRFET architecture featuring self-programmable source/drain (S/D) floating gates.
• Utilizing device simulation to verify electrical characteristics, including transfer and output performance.
• Investigating charge programming techniques via gate biasing for reconfigurable functionality.

Main Results:

• The proposed NBRFET requires only a single control gate, unlike conventional RFETs.
• Introduction of S/D floating gates enables reconfigurable functions through charge programming.
• Significant reduction in BTBT leakage current due to stored charge mitigating energy band bending.

Conclusions:

• The NBRFET offers a promising solution for advanced nanoscale electronic devices.
• The device exhibits excellent performance characteristics suitable for nanometer-scale applications.
• The simplified gate structure and reduced leakage current represent key advantages over conventional designs.