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Related Concept Videos

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

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A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
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3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry
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Optimized dopant imaging for GaN by a scanning electron microscopy.

Kai Zhang1, Chun-Guang Ban2, Ye Yuan2

  • 1School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, P. R. China.

Journal of Microscopy
|May 25, 2023
PubMed
Summary

Scanning electron microscopy (SEM) offers advanced two-dimensional dopant profiling for semiconductors. An in-lens detector provides superior doping contrast compared to other detectors, especially at lower voltages and working distances.

Keywords:
GaNdoping contrastp-n junctionscanning electron microscopy

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Analytical Chemistry

Background:

  • Accurate two-dimensional dopant profiling is crucial for semiconductor device development.
  • Scanning electron microscopy (SEM) is a promising technique for dopant analysis.

Purpose of the Study:

  • To investigate the impact of secondary electron (SE) detectors and imaging parameters on dopant profiling in Gallium Nitride (GaN) specimens using SEM.
  • To optimize SEM imaging for enhanced dopant contrast in multilayered p-n and p-i junction GaN.

Main Methods:

  • Comparative analysis of SE detector performance (in-lens vs. Everhart-Thornley).
  • Systematic variation of acceleration voltage (Vacc) and working distance (WD).
  • Exploration of imaging mechanisms related to local external fields and SE refraction.

Main Results:

  • The in-lens detector demonstrated superior doping contrast over the Everhart-Thornley detector at lower Vacc and WD.
  • Doping contrast was significantly influenced by detector type, Vacc, WD, SE angular distribution, and detector solid angle.
  • The study elucidated the underlying mechanisms of doping contrast, including external fields and refraction effects.

Conclusions:

  • Optimized SEM parameters and detector choice, particularly the in-lens detector, enhance two-dimensional dopant profiling accuracy.
  • A deeper understanding of doping contrast mechanisms aids in improving semiconductor analysis and device performance.
  • This research facilitates the full utilization of SEM for precise dopant characterization in semiconductor research.