Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors

Song Lee1, Jeong-In Lee1, Chang-Hyun Kim2

  • 1Department of Creative Convergence Engineering, Hanbat National University, Daejeon, South Korea.

Summary

Solution-processed zirconium acetylacetonate (ZAA) demonstrates excellent charge trap properties for nonvolatile memory transistors. Low-temperature processed ZAA exhibits superior multi-bit memory performance, ideal for flexible electronics.