Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Area of Science:

• Materials Science
• Electrical Engineering
• Computer Architecture

Background:

• Logic-in-memory (LiM) architectures are crucial for high-performance, energy-efficient data processing.
• Extending Moore's Law requires advanced transistor designs, such as 2D compacted transistors with integrated logic.
• Conventional logic circuits demand numerous transistors, leading to high power consumption and area inefficiency.

Purpose of the Study:

• To demonstrate a novel WSe2/h-BN/graphene based middle-floating-gate field-effect transistor (MFGFET) for LiM applications.
• To achieve reconfigurable logic functions within a single device.
• To significantly reduce transistor count and energy consumption compared to traditional designs.

Main Methods:

• Fabrication of a WSe2/h-BN/graphene MFGFET.
• Characterization of the transistor's electrical properties, including controllable polarity.
• Demonstration of reconfigurable AND/XNOR logic functions by tuning gate and drain voltages.

Main Results:

• The developed MFGFET exhibits tunable current levels and controllable polarity.
• The device successfully performs reconfigurable AND/XNOR logic functions.
• Significant reduction in transistor count: 75% for AND/NAND (from 4 to 1) and 87.5% for XNOR/XOR (from 8 to 1).

Conclusions:

• The WSe2/h-BN/graphene MFGFET is a promising candidate for advanced logic-in-memory architectures.
• This design offers substantial improvements in transistor efficiency and energy savings.
• The reconfigurable nature of the device opens new possibilities for compact and efficient computing systems.