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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Zener Diodes01:16

Zener Diodes

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Zener diodes are specialized semiconductor devices designed to operate in the reverse breakdown region, where they allow current to flow into the cathode, making it positive relative to the anode. This reverse operation distinguishes Zener diodes from conventional diodes and enables their use in various applications, most notably as voltage regulators. One of the defining characteristics of Zener diodes is their nearly vertical I-V (current-voltage) characteristic curve above a certain...
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P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Bridge rectifier01:24

Bridge rectifier

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The bridge rectifier is essential in electronics for efficiently converting alternating current (AC) to direct current (DC). Comprised of four diodes configured in a bridge layout, this rectifier effectively processes both the positive and negative halves of the AC waveform, making it superior to half-wave and full-wave center-tapped rectifiers in terms of voltage regulation and output stability.
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Related Experiment Video

Updated: Jul 29, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Multiband Microstrip Rectenna Using ZnO-Based Planar Schottky Diode for RF Energy Harvesting Applications.

Somaya I Kayed1, Dalia N Elsheakh2,3, Hesham A Mohamed3,4

  • 1Obour High Institute for Engineering and Technology, Cairo 11828, Egypt.

Micromachines
|May 27, 2023
PubMed
Summary

This study introduces a novel microstrip rectenna for radio frequency energy harvesting. The design achieves ultra-wide bandwidth and integrates a Schottky diode rectifier, demonstrating efficient energy capture from wireless signals.

Keywords:
Ag/ZnOenergy harvesting (EH)microstrip antennamoon-shaped cutplanar Schottky diode (PSD)radio frequency (RF)rectenna circuit

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Area of Science:

  • Electrical Engineering
  • Electromagnetics
  • Wireless Power Transfer

Background:

  • Radio frequency energy harvesting is crucial for powering low-power electronic devices.
  • Existing rectenna designs often face limitations in bandwidth and efficiency.
  • The need for compact, high-performance rectennas for dedicated applications is growing.

Purpose of the Study:

  • To design and demonstrate a single-substrate microstrip rectenna for dedicated radio frequency energy harvesting.
  • To enhance antenna impedance bandwidth using specific geometric modifications.
  • To integrate a high-performance rectifier circuit for efficient energy conversion.

Main Methods:

  • A microstrip antenna with a moon-shaped cut and a U-shaped slot in the ground plane was designed for ultra-wide bandwidth (UWB).
  • A shunt half-wave rectifier (SHWR) circuit incorporating a planar Ag/ZnO Schottky diode was implemented.
  • The rectenna's performance was simulated and experimentally validated.

Main Results:

  • The UWB antenna achieved a bandwidth from 3 GHz to 25 GHz (-6 dB reflection coefficient).
  • The rectenna system demonstrated a maximum measured output DC voltage of 600 mV.
  • A peak measured efficiency of 25% was achieved at 3.5 GHz with 0 dBm input power.

Conclusions:

  • The proposed single-substrate microstrip rectenna effectively harvests RF energy over a broad frequency range.
  • The geometric modifications significantly improved the antenna's impedance bandwidth.
  • The integrated rectenna system shows promising performance for dedicated energy harvesting applications.