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Related Experiment Video

Updated: Jul 29, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

A New Analytical Large-Signal Model for Quasi-Ballistic Transport in InGaAs HEMTs Accommodating Dislocation

Jinye Wang¹, Jun Liu¹, Jie Wang¹

¹Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design, Hangzhou Dianzi University, Hangzhou 310018, China.

|May 27, 2023

Summary

A new analytical model accurately predicts InGaAs high electron mobility transistor (HEMT) performance under ballistic and quasi-ballistic transport. It incorporates dislocation scattering and provides precise drain current and capacitance predictions, validated by experimental data.

Keywords:

InGaAs HEMT dislocation scattering large-signal model one-flux quasi-ballistic transport transmission coefficient

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Last Updated: Jul 29, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Published on: July 17, 2020

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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

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Area of Science:

Semiconductor Device Physics
Materials Science

Background:

InGaAs high electron mobility transistors (HEMTs) are crucial for high-frequency applications.
Accurate large-signal modeling is essential for device design and performance prediction.
Existing models often lack comprehensive physical effects or broad applicability.

Purpose of the Study:

Develop a surface-potential-based analytical large-signal model for InGaAs HEMTs.
Incorporate ballistic and quasi-ballistic transport phenomena.
Account for dislocation scattering and other physical effects for enhanced accuracy.

Main Methods:

Utilized the one-flux method and a novel transmission coefficient to derive 2D electron gas charge density.
Developed a unified expression for Ef to calculate surface potential across all gate voltage regions.
Derived analytical expressions for drain current, gate-source capacitance (Cgs), and gate-drain capacitance (Cgd).

Main Results:

The model accurately describes electron gas charge density, surface potential, drain current, and capacitances.
Dislocation scattering was effectively incorporated into the model.
Analytical expressions were derived for key device parameters.

Conclusions:

The developed analytical model offers accurate large-signal predictions for InGaAs HEMTs.
The model demonstrates excellent agreement with numerical simulations and experimental data.
It is applicable to both ballistic and quasi-ballistic transport regimes, enhancing its utility.