Measuring Spatially-Resolved Potential Drops at Semiconductor Hetero-Interfaces Using 4D-STEM

Characterizing long-range electric fields and built-in potentials in functional materials at nano to micrometer scales is of supreme importance for optimizing devices, e.g., the functionality of semiconductor hetero-structures or battery materials is determined by the electric fields established at interfaces which can also vary spatially. In this study, momentum-resolved four-dimensional scanning transmission electron microscopy (4D-STEM) is proposed for the quantification of these potentials and the optimization steps required to reach quantitative agreement with simulations for the GaAs/AlAs hetero-junction model system are shown. Using STEM the differences in the mean inner potentials (∆MIP) of two materials forming an interface and resulting dynamic diffraction effects have to be considered. This study shows that the measurement quality is significantly improved by precession, energy filtering and a off-zone-axis alignment of the specimen. Complementary simulations yielding a ∆MIP of 1.3 V confirm that the potential drop due to charge transfer at the intrinsic interface is ≈0.1 V, in agreement with experimental and theoretical values found in literture. These results show the feasibility of accurately measuring built-in potentials across hetero-interfaces of real device structures and its promising application for more complex interfaces of other polycrystalline materials on the nanometer scale.