First-principles examination of two-dimensional Janus quintuple-layer atomic structures XCrSiN₂ (X = S, Se, and Te)

In this work, we propose novel two-dimensional Janus XCrSiN₂ (X = S, Se, and Te) single-layers and comprehensively investigate their crystal structure, electronic properties, and carrier mobility by using a first-principles method. These configurations are the combination of the CrSi₂N₄ material and a transition metal dichalcogenide. The X-Cr-SiN₂ single-layers are constructed by replacing the N-Si-N atomic layer on one side with chalcogen atoms (S, Se, or Te). The structural characteristics, mechanical or thermal stabilities, and electronic properties are investigated adequately. All three examined configurations are energetically stable and are all small-bandgap semiconductors (<1 eV). Since the mirror symmetry is broken in the Janus material, there exists a remarkable built-in electric field and intrinsic dipole moment. Therefore, the spin-orbit interaction is considered intensively. However, it is observed that the spin-orbit coupling has insignificant effects on the electronic properties of XCrSiN₂ (X = S, Se, and Te). Moreover, an external electric field and strain are applied to evaluate the adjustment of the electronic features of the three structures. The transport properties of the proposed configurations are calculated and analyzed systematically, indicating the highly directional isotropy. Our results suggest that the proposed Janus XCrSiN₂ could be potential candidates for various applications, especially in nanoscale electronic devices.