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Related Concept Videos

Electrophilic Addition to Alkynes: Halogenation02:38

Electrophilic Addition to Alkynes: Halogenation

8.3K
Introduction
Halogenation is another class of electrophilic addition reactions where a halogen molecule gets added across a π bond. In alkynes, the presence of two π bonds allows for the addition of two equivalents of halogens (bromine or chlorine). The addition of the first halogen molecule forms a trans-dihaloalkene as the major product and the cis isomer as the minor product. Subsequent addition of the second equivalent yields the tetrahalide.
8.3K
Intramolecular Aldol Reaction01:18

Intramolecular Aldol Reaction

2.2K
Intramolecular aldol reaction occurs in dicarbonyl compounds such as dialdehydes, diketones, and keto-aldehydes. The dicarbonyl compounds possess more than one nucleophilic ⍺ carbon for the base to deprotonate and form the enolates. For example, in symmetrical diketones, there are four ⍺ carbons. Hence, four types of enolates are possible when treated with a base. However, since the molecule is symmetrical, the enolates formed on either side of one carbonyl group are equivalent to those...
2.2K
Conjugate Addition to α,β-Unsaturated Carbonyl Compounds01:09

Conjugate Addition to α,β-Unsaturated Carbonyl Compounds

4.3K
α,β-Unsaturated carbonyl compounds are molecules bearing a carbonyl and alkene functionality in conjugation with each other. The conjugation in the molecule leads to three resonance structures. The hybrid form exhibits two probable electrophilic sites: the carbonyl carbon and the β carbon.
4.3K
Conjugate Addition (1,4-Addition) vs Direct Addition (1,2-Addition)01:27

Conjugate Addition (1,4-Addition) vs Direct Addition (1,2-Addition)

3.3K
α,β-Unsaturated carbonyl compounds with two electrophilic sites, the carbonyl carbon, and the β carbon, are susceptible to nucleophilic attack via two modes: conjugate or 1,4-addition and direct or 1,2-addition.
Conjugate addition results in a thermodynamically stable product. The reaction retains the stronger C=O bond at the expense of the weaker C=C π bond. The process is slow as the β carbon is less electrophilic than the carbonyl carbon.
Direct addition products are...
3.3K
α-Alkylation of Ketones via Enolate Ions01:10

α-Alkylation of Ketones via Enolate Ions

3.2K
Ketones with α protons are deprotonated by strong bases like lithium diisopropylamide (LDA) to form enolate ions. The anion is stabilized by resonance, and its hybrid structure exhibits negative charges on the carbonyl oxygen and the α carbon. This ambident nucleophile can attack an electrophile via two possible sites: the carbonyl oxygen, known as O-attack, or the α carbon, known as C-attack. The nucleophilic attack via the carbanionic site is preferred. This is due to the...
3.2K
Aldol Condensation with β-Diesters: Knoevenagel Condensation01:27

Aldol Condensation with β-Diesters: Knoevenagel Condensation

3.1K
The Knoevenagel condensation is an aldol-type reaction involving the condensation of aldehydes or ketones with active methylene compounds such as β-diesters to produce substituted olefins.
3.1K

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Chemoselective Preparation of 1-Iodoalkynes, 1,2-Diiodoalkenes, and 1,1,2-Triiodoalkenes Based on the Oxidative Iodination of Terminal Alkynes
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Chemoselective Preparation of 1-Iodoalkynes, 1,2-Diiodoalkenes, and 1,1,2-Triiodoalkenes Based on the Oxidative Iodination of Terminal Alkynes

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Growth of κ-([Al,In]

Thorsten Schultz1,2, Max Kneiß3, Philipp Storm3

  • 1Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin 14109, Germany.

ACS Applied Materials & Interfaces
|June 6, 2023
PubMed
Summary

Gallium oxide-based quantum wells offer superior infrared detection (1-100 μm) compared to current technologies. Precise thickness control, achievable with pulsed laser deposition and TEM, is crucial for efficient quantum well infrared photodetector performance.

Keywords:
X-ray diffractionX-ray photoelectron spectroscopy depth profilingheterostructuresinterface analysispulsed laser depositiontransmission electron microscopy

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Optoelectronics

Background:

  • Wide band gap semiconductor κ-Ga2O3 and its alloys are promising for advanced applications.
  • Quantum-well infrared photodetectors (QWIPs) are key optoelectronic devices.
  • Current GaAs/AlxGa1-xAs QWIPs have limitations in detection range and visible light transparency.

Purpose of the Study:

  • To investigate the potential of κ-([Al,In]xGa1-x)2O3 quantum wells for enhanced infrared detection.
  • To explore the critical role of quantum well thickness in QWIP efficiency.
  • To evaluate material growth and characterization techniques for precise thickness determination.

Main Methods:

  • Theoretical simulations of quantum well infrared photodetector performance.
  • Pulsed laser deposition (PLD) for growing (InxGa1-x)2O3/ (AlyGa1-y)2O3 superlattices.
  • High-resolution X-ray diffraction (HRXRD) for structural analysis.
  • X-ray photoelectron spectroscopy (XPS) depth profiling for elemental composition.
  • Transmission electron microscopy (TEM) for precise thickness measurements.

Main Results:

  • Simulations predict κ-([Al,In]xGa1-x)2O3 QWIPs can achieve detection wavelengths of 1-100 μm, surpassing current GaAs/AlxGa1-xAs systems.
  • κ-([Al,In]xGa1-x)2O3 materials are transparent to visible light, reducing photon noise.
  • QWIP efficiency is highly sensitive to quantum well thickness.
  • Pulsed laser deposition provides the necessary accuracy for controlled growth.
  • TEM is identified as the most reliable method for determining quantum well thickness.

Conclusions:

  • κ-([Al,In]xGa1-x)2O3 quantum wells show significant potential for next-generation infrared detectors.
  • Precise control and characterization of quantum well thickness are essential for optimizing QWIP performance.
  • Transmission electron microscopy is the preferred technique for accurate quantum well thickness determination in these systems.