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In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers

Po-Cheng Tsai1, Chun-Wei Huang2, Shoou-Jinn Chang2,3

  • 1Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei, 11529, Taiwan.

Scientific Reports
|June 6, 2023
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