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Spin-orbit torque flash analog-to-digital converter.

Hamdam Ghanatian1, Luana Benetti2, Pedro Anacleto2

  • 1Department of Electrical and Computer Engineering, Aarhus University, 8200, Aarhus, Denmark. ghanatian@ece.au.dk.

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|June 9, 2023
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Summary

This study introduces a novel 3-bit spin-CMOS Flash analog-to-digital converter (ADC) utilizing magnetic tunnel junctions for improved performance. Experimental results show potential for compact, low-power ADCs, though process variations limit accuracy to 2 bits.

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Area of Science:

  • * Spintronics and integrated circuit design.
  • * Advanced semiconductor device physics.

Background:

  • * Traditional analog-to-digital converters (ADCs) show limited performance improvements.
  • * Spintronics offers CMOS compatibility and potential for compact, low-power solutions.

Purpose of the Study:

  • * To design, fabricate, and characterize a proof-of-concept 3-bit spin-CMOS Flash ADC.
  • * To explore the use of in-plane-anisotropy magnetic tunnel junctions (i-MTJs) with spin-orbit torque (SOT) switching.

Main Methods:

  • * Employed i-MTJs as comparators with SOT switching.
  • * Tuned comparator thresholds by engineering heavy metal (HM) width.
  • * Conducted Monte-Carlo simulations based on experimental measurements.

Main Results:

  • * Demonstrated a functional 3-bit spin-CMOS Flash ADC.
  • * Process variations limit the achievable accuracy to 2 bits.
  • * Maximum differential nonlinearity (DNL) and integral nonlinearity (INL) measured at 0.739 LSB and 0.7319 LSB.

Conclusions:

  • * The proposed spin-CMOS ADC architecture is feasible.
  • * Spintronics, specifically SOT-switched i-MTJs, can be integrated into ADC designs.
  • * Further optimization is needed to overcome process variations and achieve higher accuracy.