Charge Transfer Modulation in Vanadium-Doped WS₂ /Bi₂ O₂ Se Heterostructures

The field of photovoltaics is revolutionized in recent years by the development of two-dimensional (2D) type-II heterostructures. These heterostructures are made up of two different materials with different electronic properties, which allows for the capture of a broader spectrum of solar energy than traditional photovoltaic devices. In this study, the potential of vanadium (V)-doped WS₂ is investigated, hereafter labeled V-WS₂ , in combination with air-stable Bi₂ O₂ Se for use in high-performance photovoltaic devices. Various techniques are used to confirm the charge transfer of these heterostructures, including photoluminescence (PL) and Raman spectroscopy, along with Kelvin probe force microscopy (KPFM). The results show that the PL is quenched by 40%, 95%, and 97% for WS₂ /Bi₂ O₂ Se, 0.4 at.% V-WS₂ /Bi₂ O₂ Se, and 2 at.% V-WS₂ /Bi₂ O₂ Se, respectively, indicating a superior charge transfer in V-WS₂ /Bi₂ O₂ Se compared to pristine WS₂ /Bi₂ O₂ Se. The exciton binding energies for WS₂ /Bi₂ O₂ Se, 0.4 at.% V-WS₂ /Bi₂ O₂ Se and 2 at.% V-WS₂ /Bi₂ O₂ Se heterostructures are estimated to be ≈130, 100, and 80 meV, respectively, which is much lower than that for monolayer WS₂ . These findings confirm that by incorporating V-doped WS₂ , charge transfer in WS₂ /Bi₂ O₂ Se heterostructures can be tuned, providing a novel light-harvesting technique for the development of the next generation of photovoltaic devices based on V-doped transition metal dichalcogenides (TMDCs)/Bi₂ O₂ Se.