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Mesoscopic 3D Charge Transport in Solution-Processed Graphene-Based Thin Films: A Multiscale Analysis.

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  • 1Consiglio Nazionale delle Ricerche, Istituto per la Sintesi Organica e la Fotoreattività, (CNR-ISOF), via Gobetti 101, Bologna, 40129, Italy.

Small (Weinheim an Der Bergstrasse, Germany)
|June 18, 2023
PubMed
Summary
This summary is machine-generated.

This study reveals charge transport mechanisms in graphene and related 2D material (GRM) thin films near the metal-insulator transition. A general model explains transport in disordered van der Waals films by hopping between mesoscopic grains.

Keywords:
Van der Waals thin filmscharge transportdisordered systemsgraphenephase transitionweak localization

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene and related 2D material (GRM) thin films exhibit diverse electrical properties due to their complex 3D assembly of 2D nanosheets.
  • Understanding charge transport (CT) in these disordered systems is crucial for their application.

Purpose of the Study:

  • To investigate charge transport mechanisms in GRM thin films near the metal-insulator transition (MIT).
  • To highlight the influence of defect density and nanosheet arrangement on electrical characteristics.
  • To develop a general model for CT in disordered van der Waals thin films.

Main Methods:

  • Comparison of two GRM types: reduced graphene oxide and electrochemically exfoliated graphene flakes.
  • Investigation of structure, morphology, and electrical conductivity dependence on temperature, noise, and magnetic field.
  • Development of a multiscale charge transport model.

Main Results:

  • Identified distinct roles of defect density and local nanosheet arrangement in governing CT.
  • Established a general model describing CT as hopping among mesoscopic grains (bricks).
  • Demonstrated the model's applicability to disordered van der Waals thin films.

Conclusions:

  • Defect density and structural organization are key factors in GRM thin film conductivity.
  • A unified model based on mesoscopic hopping provides a general approach to understanding CT in these materials.
  • This work offers insights into tailoring GRM properties for electronic applications.