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Related Experiment Video

Updated: Jul 26, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Polarized Tunneling Transistor for Ultrafast Memory.

Jing Chen^1,2, Guanhua Dun¹, Jianguo Hu¹

¹School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.

|June 20, 2023

Summary

Researchers developed a novel polarized tunneling transistor (PTT) using ferroelectric PZT and MoS2 for ultrafast nonvolatile memory. This device overcomes limitations of current technologies, offering high speed and long retention time with a simplified fabrication process.

Keywords:

floating-gate transistor nonvolatile memory polarized tunneling transistor two-dimensional material ultrafast memory

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Published on: January 19, 2018

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Published on: March 9, 2019

Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

High-performance nonvolatile memory is crucial for the information age.
Existing memory devices face challenges like low speed, capacity, retention, and complex fabrication.
Advanced designs are needed to enhance memory performance and simplify manufacturing.

Purpose of the Study:

To present a novel nonvolatile memory device overcoming limitations of current technologies.
To introduce a polarized tunneling transistor (PTT) utilizing ferroelectric polarization for charge regulation.
To demonstrate improved speed, capacity, retention time, and fabrication simplicity.

Main Methods:

Fabrication of a transistor-based memory device using ferroelectric PZT and MoS2 channel.
Utilizing the polarization effect of PZT to control electron tunneling for charging/discharging the MoS2 layer.
Characterization of the device's programming/erasing speed, response time, extinction ratio, and retention time.

Main Results:

The PTT achieved ultrafast programming/erasing speeds of 25/20 ns and response times of 120/105 ns.
Demonstrated a high extinction ratio of 10^4 and a long retention time of 10 years.
The device fabrication process was significantly simplified, omitting tunnel and floating-gate layers.

Conclusions:

The developed PTT offers a promising solution for next-generation ultrafast nonvolatile memory.
The device's performance metrics are comparable to advanced van der Waals heterostructure flash memories.
This research provides a pathway for developing high-performance, easily fabricated memory devices.