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Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

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Updated: Jan 11, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

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Published on: June 23, 2018

InSe Ferroelectric Field-Effect Transistor for Simultaneous Perception-Memory-Computation All-in-One Broadband Motion

Jing Chen¹, Ping Li², Junqiang Zhu³

¹Institute of Marine Science and Technology & Shandong Key Laboratory of Intelligent Marine Engineering Geology, Environment and Equipment, Shandong University, Qingdao, Shandong 266237, Peoples R China.

|November 13, 2025

Summary

This summary is machine-generated.

This study introduces an Indium Selenide (InSe) ferroelectric transistor for advanced broadband motion detection and recognition (BMDR). This all-in-one device integrates perception, memory, and computation for next-generation AI robots.

Keywords:

InSe ferroelectric field-effect transistor all-in-one function bidirectional photoresponse broadband motion detection

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Area of Science:

Materials Science
Nanotechnology
Artificial Intelligence

Background:

Broadband Motion Detection and Recognition (BMDR) is crucial for AI robots but current technologies are limited.
Existing BMDR systems often lack integrated perception, memory, and computation capabilities.

Purpose of the Study:

To develop an all-in-one BMDR device using a novel two-dimensional material.
To demonstrate a ferroelectric field-effect transistor with broadband responsivity and integrated functionalities.

Main Methods:

Fabrication of an Indium Selenide (InSe) ferroelectric field-effect transistor.
Characterization of broadband responsivity (450-973 nm) and memory/computational properties.
Integration of photoconductive mechanisms and interframe differencing for motion detection and recognition (MDR).

Main Results:

The InSe device exhibited broadband responsivity due to its ~1.3 eV band gap.
Ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) enabled memory, while conductance modulation facilitated computation for artificial synapses.
Efficient MDR of a moving rabbit was achieved, with subsequent classification reaching 100% accuracy via a neural network.

Conclusions:

The InSe ferroelectric field-effect transistor successfully integrates broadband perception, memory, and computation.
This work paves the way for next-generation all-in-one BMDR technology utilizing two-dimensional devices.
The device shows significant potential for enhancing AI robot capabilities.