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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching
Biaohong Huang1,2, Xuefeng Zhao3, Xiaoqi Li1,2
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences (IMR, CAS), Shenyang, 110016, China.
ACS Nano
|June 26, 2023
Summary
Sm doping in ferroelectric thin films controls domain states via Schottky barriers, enabling high-performance ferroelectric diodes for neuromorphic computing.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Device Engineering
Background:
- Controlling ferroelectric domain evolution is crucial for optimizing material properties and device functionality.
- Ferroelectric thin films are key components in advanced electronic applications.
Purpose of the Study:
- To investigate the use of Schottky barriers at metal/ferroelectric interfaces to tailor self-polarization states.
- To explore the impact of Sm doping on ferroelectric heterostructures and their device performance.
Main Methods:
- Utilized piezoresponse force microscopy, electric transport measurements, and X-ray spectroscopy.
- Performed theoretical studies to understand the underlying physical mechanisms.
- Fabricated SrRuO3/BiFeO3/Pt ferroelectric diodes (FDs).
Main Results:
- Sm doping modulated oxygen vacancies and Fermi level, tuning the Schottky barrier and depolarization field.
- Achieved a transition from single-domain to polydomain states.
- Demonstrated colossal on/off ratios (~1.1 × 10^6) and fast operation speeds (~30 ns) in FDs.
Conclusions:
- The study provides a method for engineering self-polarization in ferroelectric heterostructures.
- Self-polarization strongly influences ferroelectric diode performance.
- Ferroelectric diodes show promise as memristors for neuromorphic computing.
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