Related Experiment Video
Updated: Jul 25, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Janus monolayer ScXY (X≠Y = Cl, Br and I) for piezoelectric and valleytronic application: a first-principle
Xiao-Shu Guo1, San-Dong Guo1, Shuo-Ning Si1
1School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, People's Republic of China.
Abstract:
Coexistence of ferromagnetism, piezoelectricity and valley in two-dimensional (2D) materials is crucial to advance multifunctional electronic technologies. Here, Janus ScXY (X≠Y = Cl, Br and I) monolayers are predicted to be piezoelectric ferromagnetic semiconductors with dynamical, mechanical and thermal stabilities. They all show an in-plane easy axis of magnetization by calculating magnetic anisotropy energy (MAE) including magnetocrystalline anisotropy energy and magnetic shape anisotropy energy. The MAE results show that they intrinsically have no spontaneous valley polarization. The predicted piezoelectric strain coefficientsd11andd31(absolute values) are higher than ones of most 2D materials. Moreover, thed31(absolute value) of ScClI reaches up to 1.14 pm V-1, which is highly desirable for ultrathin piezoelectric device application. To obtain spontaneous valley polarization, charge doping are explored to tune the direction of magnetization of ScXY. By appropriate hole doping, their easy magnetization axis can change from in-plane to out-of-plane, resulting in spontaneous valley polarization. Taking ScBrI with 0.20 holes per f.u. as an example, under the action of an in-plane electric field, the hole carriers of K valley turn towards one edge of the sample, which will produce anomalous valley Hall effect, and the hole carriers of Γ valley move in a straight line. These findings could pave the way for designing piezoelectric and valleytronic devices.
More Related Videos
10:39Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics
Published on: August 5, 2020
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Related Concept Videos
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
Dielectric Polarization in a Capacitor
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Electrostatic Boundary Conditions
The surface integral of an electric field is given by Gauss's law in integral form and is related to...
Induced Electric Fields: Applications
Interfacial Electrochemical Methods: Overview