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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots
1Daniele Barettin of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, Italy.
Abstract:
The main intent of this paper is to present an exhaustive description of the most relevant mathematical models for the electromechanical properties of heterostructure quantum dots. Models are applied both to wurtzite and zincblende quantum dot due to the relevance they have shown for optoelectronic applications. In addition to a complete overview of the continuous and atomistic models for the electromechanical fields, analytical results will be presented for some relevant approximations, some of which are unpublished, such as models in cylindrical approximation or a cubic approximation for the transformation of a zincblende parametrization to a wurtzite one and vice versa. All analytical models will be supported by a wide range of numerical results, most of which are also compared with experimental measurements.
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