Multi-Level Resistive Al/Ga₂O₃/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing.

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Physics

Background:

• Resistive Random Access Memory (RRAM) is crucial for high-density storage and in-memory computing.
• Traditional two-state RRAM faces limitations in meeting the demands of big data storage.
• Gallium oxide, a fourth-generation semiconductor, offers potential for advanced electronic devices due to its properties.

Purpose of the Study:

• To investigate the potential of Al/graphene oxide (GO)/Ga2O3/ITO RRAM for multi-level cell applications.
• To demonstrate the feasibility of achieving two-bit storage in a bilayer RRAM structure.
• To analyze the electrical properties, reliability, and transport mechanisms of the developed RRAM device.

Main Methods:

• Fabrication of a bilayer RRAM device using Al/graphene oxide (GO)/Ga2O3/ITO structure.
• Characterization of the device's resistive switching behavior and electrical properties.
• Analysis of endurance, ON/OFF ratio, and filament models to understand transport mechanisms.

Main Results:

• Successful demonstration of Al/graphene oxide (GO)/Ga2O3/ITO RRAM with potential for two-bit storage.
• The bilayer structure exhibits superior electrical properties and stable reliability compared to single-layer devices.
• Achieved endurance exceeding 100 switching cycles with an ON/OFF ratio greater than 10^3.
• Filament models were developed to elucidate the charge transport mechanisms.

Conclusions:

• The developed bilayer gallium oxide RRAM shows significant promise for high-density data storage.
• The integration of graphene oxide enhances the performance and reliability of RRAM devices.
• This research contributes to the advancement of nonvolatile memory technologies for big data era.