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Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem
Lihong Yang1, Zhumeng Li1, Guangbao Shan1
1School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|June 28, 2023
Summary
Total ionizing dose (TID) effects on radio frequency (RF) through-silicon vias (TSVs) were studied using simulations and experiments. Irradiation nonlinearly degrades TSV performance, validating a method to assess RF systems in harsh environments.
Area of Science:
- Electrical Engineering
- Materials Science
- Radiation Physics
Background:
- Radio frequency (RF) systems are critical in aerospace and nuclear applications.
- Through-silicon vias (TSVs) are integral components in modern RF systems.
- Understanding the impact of total ionizing dose (TID) on TSV performance is essential for reliability.
Purpose of the Study:
- To investigate the total ionizing dose (TID) effect on through-silicon via (TSV) structures.
- To develop and validate a simulation method for assessing RF system performance under irradiation.
- To analyze the nonlinear degradation of TSV components due to irradiation.
Main Methods:
- A 1D TSV capacitance model was developed using COMSOL Multiphysics for TID impact simulation.
- Three types of TSV components were designed and subjected to an irradiation experiment.
- S21 parameters were measured before and after irradiation to quantify performance degradation.
Main Results:
- Simulated and experimental results showed consistent trends in TSV performance degradation.
- S21 insertion loss increased nonlinearly with increasing irradiation dose (0.2 dB at 30 krad(Si), 0.6 dB at 90 krad(Si), 0.8 dB at 150 krad(Si)).
- The rate of S21 variation decreased with higher irradiation doses.
Conclusions:
- The study validates an accurate method for assessing RF system performance under irradiation.
- TID significantly impacts TSV performance, affecting RF systems and similar structures like through-silicon capacitors.
- The findings are crucial for the design and reliability of electronic components in radiation-exposed environments.
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