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Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

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Three-Dimensional Integrated Fan-Out Wafer-Level Package Micro-Bump Electromigration Study.

Wenchao Tian^1,2, Ran Gao¹, Lin Gu³

¹Hangzhou Institute of Technology, Xidian University, Hangzhou 311231, China.

|June 28, 2023

Summary

This summary is machine-generated.

Electromigration (EM) in micro-bumps is critical for semiconductor packaging reliability. High current density accelerates EM failure, with critical values identified between 4-4.5 A/cm² for Sn63Pb37. Temperature significantly impacts failure time.

Keywords:

advanced packaging electromigration failure life reliability

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Area of Science:

Materials Science
Electrical Engineering
Semiconductor Physics

Background:

Advanced semiconductor packaging relies on multi-chip vertical stacking for miniaturization and high performance.
Electromigration (EM) in micro-bumps is a primary reliability concern in high-density interconnects.
Operating temperature and current density are key factors influencing EM phenomena.

Purpose of the Study:

To investigate the relationship between loading conditions and electromigration failure time in micro-bump structures.
To analyze the electrothermal environment's impact on the failure mechanism of high-density integrated packaging.

Main Methods:

Established an equivalent model for vertical stacking in fan-out wafer-level packages.
Utilized electrothermal interaction theory for numerical simulations.
Applied the Mean Time To Failure (MTTF) equation with Sn63Pb37 as the bump material.

Main Results:

Current aggregation sites are most susceptible to EM failure in micro-bump structures.
Increased temperature significantly accelerates EM failure time, especially at 3.5 A/cm².
The critical current density for micro-bump failure is between 4 A/cm² and 4.5 A/cm².

Conclusions:

Understanding electrothermal effects is crucial for predicting EM failure in advanced packaging.
Current density and temperature are critical parameters that dictate the lifetime of micro-bumps.
The study provides critical current density thresholds for reliable micro-bump design.