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Approaches for 3D Integration Using Plasma-Enhanced Atomic-Layer-Deposited Atomically-Ordered InGaZnO Transistors
Yoon-Seo Kim1, Hye-Jin Oh1, Junghwan Kim2
1Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
Small Methods
|June 29, 2023
Summary
Stable indium-gallium-zinc-oxide (IGZO) transistors with high mobility were developed using plasma-enhanced atomic layer deposition. Optimizing plasma power is key to achieving superior electrical performance and device stability for 3D integration.
Area of Science:
- Materials Science
- Semiconductor Physics
- Electrical Engineering
Background:
- Silicon-based materials face limitations in scaling down and power saving.
- Oxide semiconductors are crucial for 3D back-end-of-line integration.
- Stable oxide semiconductors with silicon-like electrical properties are needed.
Purpose of the Study:
- To synthesize a single-crystal-like indium-gallium-zinc-oxide (IGZO) layer.
- To fabricate stable IGZO transistors with ultra-high mobility.
- To understand the relationship between plasma processing parameters and film quality.
Main Methods:
- Plasma-enhanced atomic layer deposition (PEALD) was used for IGZO synthesis.
- Plasma power of the reactant was controlled as a key processing parameter.
- The effect of chemical reactions on residual impurities (H, C, O) was evaluated.
Main Results:
- A pseudo-single-crystal IGZO layer was successfully synthesized.
- Stable IGZO transistors achieved mobility exceeding 100 cm²/Vs.
- Optimal plasma reaction energy was found to be critical for performance and stability.
Conclusions:
- Controlling plasma power in PEALD is essential for high-quality IGZO films.
- Achieving superior electrical performance and device stability depends on optimal plasma energy.
- This research advances oxide semiconductors for advanced electronic applications.
