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Related Experiment Video

Updated: Jul 25, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

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Published on: March 9, 2019

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic

Furqan Zahoor¹, Fawnizu Azmadi Hussin², Usman Bature Isyaku³

¹School of Computer Science and Engineering, Nanyang Technological University, Singapore, Singapore.

|June 29, 2023

Summary

Resistive random-access memory (RRAM) offers a fast, energy-efficient alternative to conventional computing memory. This review details RRAM

Keywords:

2D materials Emerging memory technologies High-density memory Neuromorphic computing Power dissipation Resistive random access memory (RRAM)

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Area of Science:

Materials Science and Engineering
Electrical Engineering
Computer Science

Background:

Conventional silicon-based complementary metal oxide semiconductor (CMOS) technologies face scaling limitations for data-intensive applications.
Emerging memory technologies are crucial for developing faster, more energy-efficient, and durable computing systems.
Resistive random-access memory (RRAM) is a promising candidate for next-generation computing due to its unique properties.

Purpose of the Study:

To review the development and device engineering of Resistive Random-Access Memory (RRAM).
To explore the resistive switching mechanisms within RRAM devices.
To highlight the potential of two-dimensional (2D) materials in RRAM and their applications in neuromorphic computing.

Main Methods:

Review of existing literature on RRAM technology and its advancements.
Analysis of RRAM device structures and resistive switching mechanisms.
Investigation of RRAM applications, particularly in neuromorphic computing and the integration of 2D materials.

Main Results:

RRAM demonstrates potential to replace current integrated electronic devices for advanced computing.
RRAM offers advantages such as simple structure, high speed, low power consumption, and scalability for high-density applications.
Two-dimensional (2D) materials enhance RRAM performance due to their unique properties and structural characteristics.

Conclusions:

RRAM is a key technology for the post-CMOS era, enabling efficient, intelligent, and secure computing systems.
The integration of 2D materials in RRAM offers significant opportunities for device innovation.
RRAM shows strong potential for applications in neuromorphic computing architectures.