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Switching performance assessment of gate-all-around InAs-Si vertical TFET with triple metal gate, a simulation study

Dariush Madadi1, Saeed Mohammadi2

  • 1Department of Engineering Sciences, Faculty of Technology and Engineering, Semnan University, Semnan, Iran. Madadi@semnan.ac.ir.

Discover Nano
|June 29, 2023
PubMed

Keywords:
Gate-all-aroundInAs–Si heterojunctionSubthreshold slopeTriple metal gateVertical TFET

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