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Updated: Jul 24, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Erratum: Precision Comparison of the Lattice Parameters of Silicon Monocrystals
E G Kessler1, A Henins1, R D Deslattes1
1National Institute of Standards and Technology, Gaithersburg, MD 20899-0001.
Abstract:
[This corrects the article on p. 1 in vol. 99.].
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