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Updated: Jul 24, 2025

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
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Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried

Xiaoming Yang1, Taiqiang Cao1, Xiaohua Zhang2

  • 1School of Electrical Engineering and Electronic Information, Xihua University, Chengdu 610039, China.

Micromachines
|July 8, 2023
PubMed

Keywords:
MOS devicesbreakdown voltagedeep depletionsilicon-on-insulatorstep P-type doping buried layertransient breakdown voltage

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