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Modelling and Design of a Dual Depletion PIN Photodiode as Temperature Sensor.
Ricardo A Marques Lameirinhas1,2, João Paulo N Torres2,3, Catarina P Correia V Bernardo1,2
1Department of Electrical and Computer Engineering, Instituto Superior Técnico, 1049-001 Lisbon, Portugal.
Sensors (Basel, Switzerland)
|July 11, 2023
Summary
Researchers developed a numerical model to analyze the frequency response of Indium Phosphide-Indium Gallium Arsenide (InP-InGaAs) photodiodes. This model demonstrates that these photodiodes can function as temperature sensors by detecting bandwidth variations with temperature changes.
Area of Science:
- Optoelectronics and Communications
- Semiconductor Device Physics
Background:
- Optical systems are crucial for modern communications, with dual depletion PIN photodiodes operating across various optical bands.
- Semiconductor properties are sensitive to environmental conditions, enabling optical devices to function as sensors.
- Indium Phosphide-Indium Gallium Arsenide (InP-InGaAs) photodiodes are standard for optical-to-electrical conversion around 1300 nm (O-band).
Purpose of the Study:
- To numerically analyze the frequency response of InP-InGaAs photodiodes considering transit time and capacitive effects.
- To investigate the potential of InP-InGaAs photodiodes as temperature sensors by monitoring bandwidth changes with temperature.
- To optimize device dimensions for enhanced temperature sensing capabilities.
Main Methods:
- Implementation of a numerical model to compute photodiode frequency response under non-uniform illumination.
- Analysis of frequency response across a range of input frequencies up to 100 GHz.
- Simulation of device performance at three distinct temperatures: 275 K, 300 K, and 325 K.
Main Results:
- The numerical model accurately computes the frequency response, considering both transit time and capacitive effects.
- A temperature variation of 25 K from room temperature resulted in a bandwidth shift of 8.374 GHz (increase) or 3.620 GHz (decrease).
- Optimized device dimensions (2.536 μm total length, 53.95% absorption region) were determined for a 6 V applied voltage and 500 μm² active area.
Conclusions:
- InP-InGaAs photodiodes can effectively function as temperature sensors by correlating bandwidth variations with temperature fluctuations.
- The optimized photodiode design offers a novel temperature sensing solution for integration into Indium Phosphide (InP) photonic integrated circuits.
- This research contributes to the development of versatile optoelectronic components for telecommunications and sensing applications.
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