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Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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A Unipolar Quantum Dot Diode Structure for Advanced Quantum Light Sources.

Tim Strobel¹, Jonas H Weber¹, Marcel Schmidt²

¹Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany.

|July 11, 2023

Summary

Researchers developed a new diode structure with quantum dots for triggered, indistinguishable single photons. This breakthrough advances quantum photonic technologies by enabling tunable, high-performance quantum light sources.

Keywords:

MBE growth MOVPE growth charge tuning semiconductor quantum dots single photons unipolar diode

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Published on: October 13, 2017

Area of Science:

Quantum Optics
Solid-State Physics
Materials Science

Background:

Indistinguishable single photons are essential for quantum photonic technologies.
Semiconductor quantum dots are promising sources, but controlling their emission properties remains a challenge.

Purpose of the Study:

To develop a novel gated diode structure embedding semiconductor quantum dots for tunable, high-performance single-photon emission.
To characterize the temporal evolution of spectral broadening and photon indistinguishability.

Main Methods:

Fabrication of a novel n⁺-i-n⁺⁺ diode structure with embedded semiconductor quantum dots.
Utilized photon-correlation Fourier spectroscopy, high-resolution photoluminescence spectroscopy, and two-photon interference measurements.
Investigated line width temporal evolution across six orders of magnitude in time scales.

Main Results:

Achieved blinking-free single-photon emission with high two-photon indistinguishability (V_TPI,2ns = (85.8 ± 2.2)%, V_TPI,9ns = (78.3 ± 3.0)%).
Observed minimal spectral broadening beyond ~9 ns, with a photon line width of (420 ± 30) MHz.
Identified that most dephasing mechanisms occur at time scales ≤2 ns.

Conclusions:

The gated diode structure enables spectral tuning and deterministic control of charged states for quantum dots.
The n-doping enhances carrier mobility, making the device suitable for high-speed, tunable quantum light sources.
This work provides a pathway for developing advanced quantum photonic devices.