A magnetic skyrmion diode based on potential well inducting effect

Min Xu1, Wenlong Chen1, Yuliang Chen1

  • 1Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, People's Republic of China.

Summary

This study introduces a novel magnetic skyrmion diode. It uses a voltage-controlled magnetic anisotropy gradient to create a potential well, enabling controlled skyrmion motion for diode functionality in spintronic devices.

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