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A magnetic skyrmion diode based on potential well inducting effect
Min Xu1, Wenlong Chen1, Yuliang Chen1
1Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, People's Republic of China.
This study introduces a novel magnetic skyrmion diode. It uses a voltage-controlled magnetic anisotropy gradient to create a potential well, enabling controlled skyrmion motion for diode functionality in spintronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Magnetic skyrmions are topologically protected spin structures with high potential for spintronic devices.
- Controlling skyrmion motion is crucial for developing functional spintronic devices.
Purpose of the Study:
- To propose and theoretically investigate a skyrmion diode based on engineered potential wells.
- To demonstrate diode-like functions (forward pass and reverse cutoff) for magnetic skyrmions.
Main Methods:
- Theoretical calculations of skyrmion motion induced by a potential well.
- Utilizing voltage-controlled magnetic anisotropy (VCMA) gradients to generate potential wells.
- Analyzing skyrmion dynamics under the influence of the skyrmion Hall effect (SkHE).
Main Results:
- A skyrmion diode design based on potential well induced motion was proposed.
- Forward and reverse cutoff functions were realized by controlling skyrmion velocity and trajectory.
- VCMA gradients showed distinct pinning, depinning, and annihilation effects on forward and reverse moving skyrmions.
Conclusions:
- The proposed skyrmion diode effectively controls skyrmion motion for diode functionality.
- The findings are beneficial for the design and development of advanced magnetic skyrmion diodes.
- This work paves the way for novel spintronic device applications using magnetic skyrmions.
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