X-ray Detectors Based on Ga₂O₃ Microwires.

Area of Science:

• Materials Science
• Semiconductor Physics
• Detector Technology

Background:

• X-ray detectors are crucial for medical imaging, industrial inspection, and structural analysis.
• Gallium oxide (Ga2O3) is a promising material for X-ray detectors due to its wide bandgap, high mass attenuation, and radiation resistance.

Purpose of the Study:

• To develop and characterize tin-doped Ga2O3 microwire detectors for solar-blind and X-ray detection.
• To evaluate the performance and operating temperature range of these novel detectors.

Main Methods:

• Fabrication of tin-doped Ga2O3 microwires.
• Integration of microwires into X-ray detector devices.
• Performance testing under X-ray irradiation at various temperatures.

Main Results:

• The Sn-doped Ga2O3 microwire detectors achieved a switching ratio of 1.66 × 10^2 under X-ray irradiation.
• Stable detector operation was confirmed from room temperature up to 623 K.
• The high operating temperature is among the highest reported for Ga2O3-based X-ray detectors.

Conclusions:

• Tin-doped Ga2O3 microwires represent a viable material for high-performance X-ray detectors.
• The demonstrated high-temperature stability opens new avenues for advanced detector applications.
• This research provides a promising direction for the future design of Ga2O3 X-ray detectors.