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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
666
P-N junction01:11

P-N junction

585
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
585
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

389
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

395
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
395
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

399
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
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Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
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Related Experiment Video

Updated: Jul 23, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Single-Charge Tunneling in Codoped Silicon Nanodevices.

Daniel Moraru1, Tsutomu Kaneko1, Yuta Tamura1

  • 1Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan.

Nanomaterials (Basel, Switzerland)
|July 14, 2023
PubMed
Summary

Codoped silicon nanostructures enable single-charge tunneling in advanced electronic devices. This research explores quantum dots formed by intentional donor and acceptor doping in silicon-on-insulator films, enhancing device functionality.

Keywords:
boroncodopingdopant-induced quantum dotsdopingnanostructuresphosphorussiliconsingle-electron tunneling

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Moore's Law is nearing its limit due to shrinking transistor gate lengths.
  • Dopant behavior is critical in nanoscale semiconductor devices, influencing transport properties.
  • Random dopant distribution significantly impacts nanostructure performance.

Purpose of the Study:

  • To investigate single-charge tunneling in codoped silicon nanodevices.
  • To explore the role of quantum dots formed by codoping in silicon nanostructures.
  • To demonstrate enhanced functionalities in codoped silicon devices.

Main Methods:

  • Fabrication of codoped silicon-on-insulator (SOI) films with phosphorus (P) donors and boron (B) acceptors.
  • Characterization of highly doped pn diodes for band-to-band tunneling (BTBT).
  • Analysis of nanoscale SOI field-effect transistors (SOI-FETs) for single-electron tunneling (SET).

Main Results:

  • Observed BTBT via quantum dots (QDs) in depletion layers of codoped pn diodes.
  • Reported current peaks and Coulomb diamonds in codoped nanoscale SOI-FETs.
  • Attributed these phenomena to SET via QDs in nanoscale channels.

Conclusions:

  • Codoped silicon nanostructures exhibit quantum dot formation due to dopant distribution.
  • Single-charge tunneling phenomena (BTBT and SET) are achievable in these codoped systems.
  • The interplay between donors and acceptors in silicon nanostructures offers new avenues for device applications.