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Updated: Jul 23, 2025

Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains
Published on: July 20, 2022
Non-volatile reconfigurable spin logic functions in a two-channel Hall bar by spin-orbit torque-based magnetic
JeongHun Shin1, Jeongwoo Seo2, Saegyoung Song2
1Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea.
Abstract:
A long-standing goal of CMOS-based logic devices is to meet the needs of key markets, including ultralow-power operation and high operation speed, along with the continuing miniaturization of the architecture. However, despite significant progress in their development, conventional CMOS-based devices still suffer from drawbacks such as introducing large unintended leakage currents and volatile behavior. Thus, reconfigurable logic gates based on magnetic domain (MD) have emerged as a highly promising option because they offer fast operation speeds, nonvolatility, and diverse logic functions in a single-device configuration. Here, we address multiple reconfigurable MD logic gates in a single two-channel Hall bar device by varying the voltage-driven read-current directions and selecting a non-inverting or inverting comparator in W/CoFeB/MgO/Ta stacks. The non-volatile MD switching behavior induced by spin-orbit torque significantly affects our logic gate functions, which are not necessarily synchronized to a single clock. By adapting MD switching by spin-orbit torque and anomalous Hall effect voltage outputs, we identified eight reconfigurable logic gates, including AND, NAND, NOR, OR, INH, Converse INH, Converse IMP, and IMP, in a single device. These experimental findings represent a significant step forward in a wide range of MD-based logic applications in the near future.
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