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Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing

Zhongyang Liu1, Yilin Sun1,2, Yingtao Ding1

  • 1School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.

The Journal of Physical Chemistry Letters
|July 21, 2023
PubMed
Summary

Researchers developed a novel ferroelectric field effect transistor using 2D materials. This device exhibits excellent performance, including an ultralow subthreshold swing and high carrier mobility, paving the way for efficient nanoscale electronics.

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