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Tunable Interband Transitions in Twisted h-BN/Graphene Heterostructures

Bingyao Liu1,2,3, Yu-Tian Zhang4, Ruixi Qiao5

  • 1Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.

Physical Review Letters
|July 21, 2023
PubMed
Summary

Twisted hexagonal boron nitride (h-BN)/graphene heterostructures exhibit tunable electronic properties. Twist angle influences band structure and interband transitions, offering new design possibilities for optoelectrical devices.

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