Stark control of electrons across the molecule-semiconductor interface

Area of Science:

• Quantum dynamics
• Ultrafast laser science
• Materials science

Background:

• Controlling electron dynamics at interfaces is crucial for science and technology.
• The Stark control of electrons at interfaces (SCELI) method was previously developed for semiconductor interfaces.
• SCELI utilizes the subcycle structure of light to manipulate electron dynamics.

Purpose of the Study:

• To demonstrate the general applicability of SCELI to molecule-semiconductor interfaces.
• To investigate the quantum dynamics induced by laser pulses at these interfaces.
• To explore SCELI's effectiveness across varying energy level alignments.

Main Methods:

• Simulating quantum dynamics of model molecule-semiconductor interfaces.
• Applying non-resonant few-cycle laser pulses of intermediate intensity.
• Analyzing electron dynamics and charge transfer phenomena.

Main Results:

• SCELI induces interfacial charge transfer irrespective of energy level alignment.
• Charge transfer occurs even when resonant photoexcitation is forbidden.
• SCELI facilitates faster charge transfer rates compared to resonant methods.
• The subcycle structure of light controls the SCELI charge transfer rate.

Conclusions:

• SCELI is a generally applicable method for manipulating electron dynamics at molecule-semiconductor interfaces.
• SCELI offers a pathway for ultrafast control of charge transfer.
• The findings highlight SCELI's potential for advanced optoelectronic applications.