Related Experiment Video
Updated: Jul 21, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Enhancing the Uniformity of Organic Field-Effect Transistors by a Single-Crystalline Layer-Controlled Active Channel
Qiuyue Sheng1, Boyu Peng1, Chong Ji1
1MOE Key Laboratory of Macromolecular Synthesis and Functionalization, International Research Center for X Polymers, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
Abstract:
Despite remarkable improvement in the mobility of the organic field-effect transistors (OFETs) being achieved in past decades, the uniformity in electrical performance remains ambiguous, impeding their implantation in organic integrated circuits. The coefficient of variance (CV) in mobility of reported OFETs is typically larger than 8%, which is not adequate for building medium-to-large scale integrated circuits. In this work, it is shown that utilizing single-domain molecular monolayer crystals as the active channel can largely enhance the uniformity of OFETs. Benefiting from the sole molecular layer with long-range ordering, the OFETs exhibit uniformities in both channel transport and charge injection, thereby giving rise to a high average mobility of 11.64 cm2 V-1 s-1 and CV of only 2.57%. Statistical transmission length method evaluation is conducted, covering channel length from 3 to 21 µm, channel width from 90 to 170 µm, and a total OFET number of 370. The low contact resistance of 79.00 ± 7.00 Ω cm and high intrinsic mobility of 12.36 ± 0.45 cm2 V-1 s-1 are acquired with very high accuracy and reliability. As such, this work provides a practical way to enhance the uniformity of OFETs by a single-crystalline layer-controlled active channel toward their applications in integrated circuits.
More Related Videos
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
14:16Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...