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Geometrical Doping at the Atomic Scale in Oxide Quantum Materials.

Minsu Choi^1,2, Hyunwoo Jeon¹, Kitae Eom^1,3

¹School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.

|July 27, 2023

Summary

Geometric control of chemical dopants, termed geometrical doping, is a new parameter for tuning material properties. This approach offers novel electronic states in nanostructured materials by precisely positioning dopants at the atomic scale.

Keywords:

SrTiO3 atomic scale chemical doping metal−insulator transition oxide

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Chemical dopants traditionally assumed uniform distribution in 3D systems.
Dopant location relative to interfaces significantly impacts nanostructured material performance.
Scaling materials to the nanoscale necessitates considering dopants as discrete defects.

Purpose of the Study:

Introduce geometrical control of dopants as a fundamental parameter in chemical doping.
Explore the unexplored dimensionality between 2D and 3D for geometrically controlled structures.
Demonstrate how geometrical doping enables diverse emergent electronic states.

Main Methods:

Investigated atomic-scale geometrical control of dopants in nanostructured materials.
Analyzed the electronic state transitions in doped strontium titanate (SrTiO3) across dimensionalities.
Focused on the impact of dopant positioning beyond conventional doping parameters (type and amount).

Main Results:

Established geometrical control of dopants as a critical factor in nanoscale materials.
Extended the concept of geometrically controlled structures to a new dimensionality between 2D and 3D.
Showcased the ability to tune electronic properties and achieve emergent electronic states via geometrical doping.

Conclusions:

Geometrical doping provides a novel pathway to engineer material properties at the atomic scale.
This approach unlocks new possibilities for creating advanced electronic states in nanomaterials.
The precise placement of dopants offers a powerful tool for next-generation device design.